高频CMOS模拟集成电路基础-so88
高频CMOS模拟集成电路基础 pdf epub mobi txt 电子书 下载 2022
图书介绍
☆☆☆☆☆
||
Duran Leblebici 著
店铺: 欣欣佳和图书专营店 出版社: 科学出版社 ISBN:9787030315199 商品编码:29250622205 包装:平装 出版时间:2011-06-01
基本信息
书名:高频CMOS模拟集成电路基础
定价:60.00元
作者:Duran Leblebici
出版社:科学出版社
出版日期:2011-06-01
ISBN:9787030315199
字数:
页码:
版次:1
装帧:平装
开本:16开
商品重量:0.481kg
编辑推荐
莱布莱比吉编著的《高频CMOS模拟集成电路基础(影印版)》是“国外电子信息精品著作”系列之一,系统地介绍了高频集成电路体系的构建与运行,重点讲解了晶体管级电路的工作体系,设备性能影响及伴随响应,以及时域和频域上的输入输出特性。
内容提要
莱布莱比吉编著的《高频CMOS模拟集成电路基础(影印版)》以设计为核心理念从基础模拟电路讲述到射频集成电路的研发。系统地介绍了高频集成电路体系的构建与运行,重点讲解了晶体管级电路的工作体系,设备性能影响及伴随响应,以及时域和频域上的输入输出特性。
《高频CMOS模拟集成电路基础(影印版)》适合电子信息专业的高年级本科生及研究生作为RFCMOS电路设计相关课程的教材使用,也适合模拟电路及射频电路工程师作为参考使用。
目录
Preface1 Components of analog CMOS ICs 1.1 MOS transistors 1.1.1 Current-voltage relations of MOS transistors 1.1.1.1 The basic current-voltage relations without velocitysaturation 1.1.1.2 Current-voltage relations under velocity saturation 1.1.1.3 The sub-threshold regime 1.1.2 Determination of model parameters and related secondaryeffects 1.1.2.1 Mobility 1.1.2.2 Gate capacitance 1.1.2.3 Threshold voltage 1.1.2.4 Channel length modulation factor 1.1.2.5 Gate length (L) and gate width (W) 1.1.3 Parasitics of MOS transistors 1.1.3.1 Parasitic capacitances 1.1.3.2 The high-frequency figure of merit 1.1.3.3 The parasitic resistances 1.2 Passive on-chip ponents 1.2.1 On-chip resistors 1.2.2 On-chip capacitors 1.2.2.1 Passive on-chip capacitors 1.2.2.2 Varactors 1.2.3 On-chip inductors2 Basic MOS amplifiers: DC and low-frequency behavior 2.1 Common source (grounded source) amplifier 2.1.1 Biasing 2.1.2 The small-signal equivalent circuit 2.2 Active transistor loaded MOS amplifier(CMOS inverter asanalog amplifier) 2.3 Common-gate (grounded-gate) amplifier 2.4 Common-drain amplifier (source follower) 2.5 The long tailed pair 2.5.1 The large signal behavior of the long tailed pair 2.5.2 Common-mode feedback3 High-frequency behavior of basic amplifiers 3.1 High-frequency behavior of a mon-source amplifier 3.1.1 The R-C load case 3.2 The source follower amplifier at radio frequencies 3.3 The mon-gate amplifier at high frequencies 3.4 The cascode amplifier 3.5 The CMOS inverter as a transimpedance amplifier 3.6 MOS transistor with source degeneration at high frequencies 3.7 High-frequency behavior of differential amplifiers 3.7.1 The R-C loaded long tailed pair 3.7.2 The fully differential, current-mirror loaded amplifier 3.7.3 Frequency response of a single-ended output long tailedpair 3.7.4 On the input and output admittances of the long tailedpair 3.8 Gain enhancement techniques for high-frequency amplifiers 3.8.1 Additive approach: distributed amplifiers 3.8.2 Cascading strategies for basic gain stages 3.8.3 An example: the Cherry-Hooper amplifier4 Frequency-selective RF circuits 4.1 Resonance circuits 4.1.1 The parallel resonance circuit 4.1.1.1 The quality factor of a resonance circuit 4.1.1.2 The quality factor from a different point of view 4.1.1.3 The Q enhancement 4.1.1.4 Bandwidth of a parallel resonance circuit 4.1.1.5 Currents of L and C branches of a parallel resonancecircuit 4.1.2 The series resonance circuit 4.1.2.1 Component voltages in a series resonance circuit 4.2 Tuned amplifiers 4.2.1 The mon-sot/rce tuned amplifier 4.2.2 Thi tuned cascode amplifier 4.3 Cascaded tuned stages and the staggered tuning 4.4 Amplifiers loaded with coupled resonance circuits 4.4.1 Magic coupling 4.4.2 Capacitive coupling 4.5 The gyrator: a valuable tool to realize high-value on-chipinductances 4.5.1 Parasitics of a non-ideal gyrator 4.5.2 Dynamic range of a gyrat0r-based inductor 4.6 The low-noise amplifier (LNA) 4.6.1 Input impedance matching 4.6.2 Basic circuits suitable for LNAs 4.6.3 Noise in amplifiers 4.6.3.1 Thermal noise of a resistor 4.6.3.2 Thermal noise of a MOS transistor 4.6.4 Noise in LNAs 4.6.5 The differential LNA5 L-C oscillators 5.1 The negative resistance approach to L-C oscillators 5.2 The feedback approach to L-C oscillators 5.3 Frequency stability of L-C oscillators 5.3.1 Crystal oscillators 5.3.2 The phase-lock technique 5.3.3 Phase noise in oscillators6 Analog-digital interface and system-level design considerations 6.1 General observations 6.2 Discrete-time sampling 6.3 Influence of sampling clock jitter 6.4 Quantization noise 6.5 Converter specifications 6.5.1 Static specifications 6.5.2 Frequency-domain dynamic specifications 6.6 Additional observations on noise in high-frequency ICsAppendix A Mobility degradation due to the transversal fieldAppendix B Characteristic curves and parameters of AMS 0.35 micronNMOS and PMOS transistorsAppendix C BSIM3-v3 parameters of AMS 0.35 micron NMOS and PMOStransistorsAppendix D Current sources and current mirrors D.1 DC current sources D.2 Frequency characteristics of basic current mirrors D.2.1 Frequency characteristics for normal saturation D.2.2 Frequency characteristics under velocity saturationReferencesIndex
作者介绍
文摘
序言
高频CMOS模拟集成电路基础 电子书 下载 mobi epub pdf txt
电子书下载地址:
相关电子书推荐:
- 文件名
- BF-无人机系统导论-(第4版)-(美)法尔斯特伦,(美)格里森,郭正 国防工业出版社 9
- 国家公派留学人员英语统考教程:写作(第2版)
- 全世界孩子都爱做2000个思维游戏
- 牛津英语百科分类词典系列:牛津英语语法词典 [Oxford Dictionary of English Grammar]
- 嗨 元素 奇幻旅程 元素化学科普书 趣味化学实验化学元素化合物基础知识全集 元素之旅化学科普漫画故事
- 老公使用说明书
- 爬行动物 牛立红著
- 男人是逻辑动物 女人是情绪动物
- 走进奇妙的元素周期表 9787544288699 (日)吉田隆嘉-RT
- 标准俄语从零学 零起点轻松入门
- {RT}有机化学世界大观-《有机化学世界大观》编写组著 世界图书出版公司 97875100
- 中日交流标准中国语(附CD光盘1张)
- 新编地图学教程(第3版) 9787040462685
- 医林怪杰张炳厚 张炳厚 主编 中医的理论性、实践性及灵活性 2018年05月 平装 97
- 原子时代 9787535280206 (美)查利·塞缪尔斯(Charlie Samuels