9787560345130 半导体物理性能手册 卷 哈尔滨工业大学出版社 (日)足立贞夫-so88
9787560345130 半导体物理性能手册 卷 哈尔滨工业大学出版社 (日)足立贞夫 pdf epub mobi txt 电子书 下载 2022
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日足立贞夫 著
店铺: 聚雅图书专营店 出版社: 哈尔滨工业大学出版社 ISBN:9787560345130 商品编码:29540105652 包装:平装 出版时间:2014-04-01
基本信息
书名:半导体物理性能手册 卷
定价:198.00元
作者:(日)足立贞夫
出版社:哈尔滨工业大学出版社
出版日期:2014-04-01
ISBN:9787560345130
字数:
页码:
版次:1
装帧:平装
开本:16开
商品重量:0.4kg
编辑推荐
内容提要
《半导体物理性能手册(卷)(英文版)》系Springer手册精选原版系列。《半导体物理性能手册(卷)(英文版)》主要包括Diamond(C)、Silicon(Si)、Germanium(C)、Gray Tin(a—Sn)、Cubic Silicon Carbide(3C—SiC)、Hexagonal Silicon Carbide(2H—,4H—,6H—SiC,etc.)、Rhombohedral Silicon Carbide(15R—,21R—,24R—SiC,etc.)等内容。
目录
Preface
Acknowledgments
Contents of Other Volumes
1 Diamond (C)
1.1 Structural Properties
1.1.1 Ionicity
1.1.2 Elemental Isotopic Abundance and Molecular Weight
1.1.3 Crystal Structure and Space Group
1.1.4 Lattice Constant and Its Related Parameters
1.1.5 Structural Phase Transition
1.1.6 Cleavage Plane
1.2 Thermal Properties
1.2.1 Melting Point and Its Related Parameters
1.2.2 Specific Heat
1.2.3 Debye Temperature
1.2.4 Thermal Expansion Coefficient
1.2.5 Thermal Conductivity and Diffusivity
1.3 Elastic Properties
1.3.1 Elastic Constant
1.3.2 Third—Order Elastic Constant
1.3.3 Young's Modulus, Poisson's Ratio, and Similar
1.3.4 Microhardness
1.3.5 Sound Velocity
1.4 Phonons and Lattice Vibronic Properties
1.4.1 Phonon Dispersion Relation
1.4.2 Phonon Frequency
1.4.3 Mode Gruneisen Parameter
1.4.4 Phonon Deformation Potential
1.5 Collective Effects and Related Properties
1.5.1 Piezoelectric Constant
1.5.2 Frohlich Coupling Constant
1.6 Energy—Band Structure: Energy—Band Gaps
1.6.1 Basic Properties
1.6.2 E0—Gap Region
1.6.3 Higher—Lying Direct Gap
1.6.4 Lowest Indirect Gap
1.6.5 Conduction—Valley Energy Separation
1.6.6 Direct—Indirect—Gap Transition Pressure
1.7 Energy—Band Structure: Electron and Hole Effective Masses
1.7.1 Electron Effective Mass: Γ Valley
1.7.2 Electron Effective Mass: Satellite Valley
1.7.3 Hole Effective Mass
1.8 Electronic Deformation Potential
1.8.1 Intravalley Deformation Potential: Γ Point
1.8.2 Intravalley Deformation Potential: High—Symmetry Points
1.8.3 Intervalley Deformation Potential
1.9 Electron Affinity and Schottky Barrier Height
1.9.1 Electron Affinity
1.9.2 Schottky Barrier Height
1.10 Optical Properties
1.10.1 Summary of Optical Dispersion Relations
1.10.2 The Reststrahlen Region
1.10.3 At or Near the Fundamental Absorption Edge
1.10.4 The Interband Transition Region
1.10.5 Free—Carrier Absorption and Related Phenomena
1.11 Elastooptic, Electrooptic, and Nonlinear Optical Properties
1.11.1 Elastooptic Effect
1.11.2 Linear Electrooptic Constant
1.11.3 Quadratic Electrooptic Constant
1.11.4 Franz—Keldysh Effect
1.11.5 Nonlinear Optical Constant
1.12 Carrier Transport Properties
1.12.1 Low—Field Mobility: Electrons
1.12.2 Low—Field Mobility: Holes
1.12.3 High—Field Transport: Electrons
1.12.4 High—Field Transport: Holes
1.12.5 Minority—Carrier Transport: Electrons in ρ—Type Materials
1.12.6 Minority—Carrier Transport: Holes in n—Type Materials
1.12.7 Impact Ionization Coefficient
2 Silicon (Si)
2.1 Structural Properties
2.1.1 Ionicity
2.1.2 Elemental Isotopic Abundance and Molecular Weight
2.1.3 Crystal Structure and Space Group
2.1.4 Lattice Constant and Its Related Parameters
2.1.5 Structural Phase Transition
2.1.6 Cleavage Plane
2.2 Thermal Properties
2.2.1 Melting Point and Its Related Parameters
2.2.2 Specific Heat
2.2.3 Debye Temperature
2.2.4 Thermal Expansion Coefficient
2.2.5 Thermal Conductivity and Diffusivity
2.3 Elastic Properties
2.3.1 Elastic Constant
2.3.2 Third—Order Elastic Constant
2.3.3 Young's Modulus, Poisson's Ratio, and Similar
2.3.4 Microhardness
2.3.5 Sound Velocity
2.4 Phonons and Lattice Vibronic Properties
2.4.1 Phonon Dispersion Relation
2.4.2 Phonon Frequency
2.4.3 Mode Gruneisen Parameter
2.4.4 Phonon Deformation Potential
2.5 Collective Effects and Related Properties
2.5.1 Piezoelectric Constant
2.5.2 Frohlich Coupling Constant
2.6 Energy—Band Structure: Energy—Band Gaps
2.6.1 Basic Properties
2.6.2 E0—Gap Region
2.6.3 Higher—Lying Direct Gap
2.6.4 Lowest Indirect Gap
2.6.5 Conduction—Valley Energy Separation
2.6.6 Direct—Indirect—Gap Transition Pressure
2.7 Energy—Band Structure: Electron and Hole Effective Masses
2.7.1 Electron Effective Mass: Γ Valley
2.7.2 Electron Effective Mass: Satellite Valley
2.7.3 Hole Effective Mass
2.8 Electronic Deformation Potential
2.8.1 Intravalley Deformation Potential: Γ Point
2.8.2 Intravalley Deformation Potential: High—Symmetry Points
2.8.3 Intervalley Deformation Potential
2.9 Electron Affinity and Schottky Barrier Height
2.9.1 Electron Affinity
2.9.2 Schottky Barrier Height
2.10 Optical Properties
2.10.1 Summary of Optical Dispersion Relations
2.10.2 The Reststrahlen Region
2.10.3 At or Near the Fundamental Absorption Edge
2.10.4 The Interband Transition Region
2.10.5 Free—Carrier Absorption and Related Phenomena
2.11 Elastooptic, Electrooptic, and Nonlinear Optical Properties
2.11.1 Elastooptic Effect
2.11.2 Linear Electrooptic Constant
2.11.3 Quadratic Electrooptic Constant
2.11.4 Franz—Keldysh Effect
2.11.5 Nonlinear Optical Constant
2.12 Carrier Transport Properties
2.12.1 Low—Field Mobility: Electrons
2.12.2 Low—Field Mobility: Holes
2.12.3 High—Field Transport: Electrons
2.12.4 High—Field Transport: Holes
2.12.5 Minority—Carrier Transport: Electrons in p—Type Materials
2.12.6 Minority—Carrier Transport: Holes in n—Type Materials
2.12.7 Impact Ionization Coefficient
3 Germanium (C)
3.1 Structural Properties
3.1.1 Ionicity
3.1.2 Elemental Isotopic Abundance and Molecular Weight
3.1.3 Crystal Structure and Space Group
3.1.4 Lattice Constant and Its Related Parameters
3.1.5 Structural Phase Transition
3.1.6 Cleavage Plane
3.2 Thermal Properties
3.2.1 Melting Point and Its Related Parameters
3.2.2 Specific Heat
3.2.3 Debye Temperature
3.2.4 Thermal Expansion Coefficient
3.2.5 Thermal Conductivity and Diffusivity
3.3 Elastic Properties
3.3,1 Elastic Constant
3.3.2 Third—Order Elastic Constant
3.3.3 Young's Modulus, Poisson's Ratio, and Similar
3.3.4 Microhardness
3.3.5 Sound Velocity
3.4 Phonons and Lattice Vibronic Properties
3.4.1 Phonon Dispersion Relation
3.4.2 Phonon Frequency
3.4.3 Mode Gruneisen Parameter
3.4.4 Phonon Deformation Potential
3.5 Collective Effects and Related Properties
3.5.1 Piezoelectric Constant
3.5.2 Frohlich Coupling Constant
3.6 Energy—Band Structure: Energy—Band Gaps
3.6.1 Basic Properties
3.6.2 Eo—Gap Region
3.6.3 Higher—Lying Direct Gap
3.6.4 Lowest Indirect Gap
3.6.5 Conduction—Valley Energy Separation
3.6.6 Direct—Indirect—Gap Transition Pressure
3.7 Energy—Band Structure: Electron and Hole Effective Masses
3.7.1 Electron Effective Mass: F Valiey
3.7.2 Electron Effective Mass: Satellite Valley
3.7.3 Hole Effective Mass
3.8 Electronic Deformation Potential
3.8.1 Intravalley Deformation Potential: Γ Point
3.8.2 Intravalley Deformation Potential: High—Symmetry Points
3.8.3 Intervalley Deformation Potential
3.9 Electron Affinity and Schottky Barrier Height
3.9.1 Electron Affinity
3.9.2 Schottky Barrier Height
3.10 Optical Properties
3.10.1 Summary of Optical Dispersion Relations
3.10.2 The Reststrahlen Region
3.10.3 At or Near the Fundamental Absorption Edge
3.10.4 The Interband Transition Region
3.10.5 Free—Carrier Absorption and Related Phenomena
3.11 Elastooptic, Electrooptic, and Nonlinear Optical Properties
3.11.1 Elastooptic Effect
3.11.2 Linear Electrooptic Constant
3.11.3 Quadratic Electrooptic Constant
3.11.4 Franz—Keldysh Effect
3.11.5 Nonlinear Optical Constant
3.12 Carrier Transport Properties
3.12.1 Low—Field Mobility: Electrons
3.12.2 Low—Field Mobility: Holes
3.12.3 High—Field Transport: Electrons
3.12.4 High—Field Transport: Holes
3.12.5 Minority—Carrier Transport: Electrons in p—Type Materials
3.12.6 Minority—Carrier Transport: Holes in n—Type Materials
3.12.7 Impact Ionization Coefficient
4 Gray Tin (a—Sn)
4.1 Structural Properties
4.1.1 lonicity
4.1.2 Elemental Isotopic Abundance and Molecular Weight
4.1.3 Crystal Structure and Space Group
4.1.4 Lattice Constant and Its Related Parameters
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